Mr. Mark Loboda received his Bachelor of Science and Master of Science degrees in Applied Physics from DePaul University, Chicago, Illinois, in 1983 and 1985, respectively. During his graduate studies, he engaged in research and development on pulsed nuclear magnetic resonance spectroscopy, power electronics circuits, and computer interfacing and automation. From 1985 to 1989, Mr. Loboda was employed by the Raytheon Company’s Research Division in Lexington, Massachusetts. His work centered on fundamental research and development, specifically the design and characterization of ultra-stable time base systems for communication and radar technologies.

In 1989, Mr. Loboda joined Dow Corning Corporation in Midland, Michigan. At Dow Corning, he developed and transferred silicon-based thin film materials technology for fabricating new developed copper damascene interconnect structures needed for production of microprocessors operating

at gigahertz frequencies. Between 1991 and 2014, Mr. Loboda conducted research focused on the development of semiconductor silicon carbide epitaxial films and silicon carbide crystal growth. As Chief Scientist, he led a technical team to develop 4H-SiC crystal growth, wafering, and epitaxy products, supporting 76–150 mm diameter substrates for power semiconductor fabrication. This research led to major advancements in ultra-low defect 4H-SiC epitaxial wafers and achieved the first near-theoretical SiC device performance in high-voltage (20 kV) PiN diodes.

In 2017, Mr. Loboda became the Senior Vice President/CTO of Science and Technology at Hemlock Semiconductor Operations, LLC. Hemlock Semiconductor is the sole US-based supplier of hyper-pure polysilicon used in manufacturing semiconductor silicon devices. His responsibilities included overseeing polysilicon R&D, ultra-trace analytical testing, and quality operations. Throughout his career, Mr. Loboda authored over 130 technical publications. He is credited as an inventor on 35 patents, with 15 patents specifically related to semiconductor silicon carbide technology.